murs105 thru murs160 page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http://www.frontierusa.com 1a ultra fast recovery surface mount rectifier murs105 thru murs160 features z low profile package z plastic package has underwriters laboratory 94v-0 z ideal for surface mounted application z glass passivated chip junction z built-in strain relief design z ultra fast recovery time for high efficient z high temperature soldering : 250c/10 seconds at terminals mechanical data z case: molded plastic, do-214ac (sma), dimensions in inches and (millimeters) z terminals: solder plated z polarity: indicated by cathode band z weight: 0.064 grams maximum ratings and electrical characteristics ratings at 25 c ambient temperature unless otherwise specified single phase, half wave, 60 hz, resistive or inducti ve load. for capacitive load, derate current by 20% ratings symbol murs 105 murs 110 murs 115 murs 120 murs 140 murs 160 units maximum recurrent peak reverse voltage v rrm 50 100 150 200 400 600 v maximum rms voltage v rms 35 70 105 140 280 420 v maximum dc blocking voltage v dc 50 100 150 200 400 600 v maximum average forward rectified current at t l =75 c i o 1.0 a peak forward surge current, 8.3ms single half sine-wave superimposed on rated load i fsm 40 35 a typical junction capacitance (note 1) c j 15 pf typical thermal resistance (note 2) r jl 13 c /w storage temperature range t stg -55 to + 150 c operating temperature range t op -55 to + 125 c electrical characteristics (a t t a =25 c unless otherwise noted) characteristics symbol murs 105 murs 110 murs 115 murs 120 murs 140 murs 160 units maximum forward voltage at i o dc v f 0.875 1.25 v maximum dc reverse current at ta=25 c i r 2 5 a maximum dc reverse current at ta=125 c i r 250 a maximum reverse recovery time (note 3) t rr 25 50 ns marking u1a u1b u1c u1d u1g u1j notes: 1. measured at 1 mhz and applied reverse voltage 0f 4.0 volts 2. thermal resistance from junction to ambient and junction to lead p.c.b. mounted on 0.3x0.3?( 8.0x8.0 mm) copper pad areas 3. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a .220(5.6) .192(4.9) .190(4.8) .157(4.0) .071(1.8) .035(0.9) .110(2.8) .090(2.3) .080(2.0) .100(2.6) .080(2.0) .065(1.65) .040(1.25) cathode soldering pad .220(5.58) ref .052(1.32) min .08(2.03) min .094(2.38) max
murs105 thru murs160 page: 2 ratings and characteristic curve murs105 thru murs160 1000 100 10 1.0 0.1 0.01 fig. 6-typical junction capacitance .1 .2 .4 1.0 2 4 10 20 40 100 reverse voltage (v) 200 100 40 20 10 6 4 2 1 junction capacitance (pf) t j =25 o c average forward current ( a ) 2.0 1.0 0 25 50 7 5 10 0 12 5 15 0 17 5 ambient temperature ( o c) fig. 2-typical forward current derating curve single phase half wave 60 hz resistive or inductive load +0.5a 0 -0.25a trr 1cm set time base for 10/20 ns/c m fig. 3-typical reverse characteristics 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) t j =25 o c t j =80 o c t j =125 o c instantaneous reverse current (ua) 100 10 1.0 0.1 0.01 fig. 4-typical instantaneous f o r w ard c hara c teri s ti cs .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 instantaneous forward voltage (v) murs105 ~ 120 10 1.0 .1 .01 .001 instantaneous forward current (a) murs130~160 fig. 5-maximum non-repetitive forward surge current 1 5 10 20 50 100 number of cycles at 60 hz peak forward surge current ( a ) 8.3 ms single half sine wave (jedec method) 40 30 25 20 15 10 5 0 fig. 1-test circuit diagram and reverse recovery time characteristic pulse generator ( note 2 ) (+) 25 v dc (approx) (-) d.u.t. 1 non inductive oscilloscope ( note 1 ) 50 no inductive 100 no inductive (-) (+) note: 1. rise time=7ns max. input impedance=1 mohms 22pf 2. rise time =10ns max. source impedance=50 ohms
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